Silicon/silicon Dioxide Nanostructure in Electrostatic Field
نویسندگان
چکیده
Paper presents a numerical analysis of quantum states and probability ψψ* function of a Si/SiO2 nanostructure in varying electrostatic field. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson Schrödinger model of COMSOL Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior of ultrascaled Si/SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.
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